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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Sidac High Voltage Bilateral Triggers
. . . designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on-state. Conduction will continue like an SCR until the main terminal current drops below the holding current. The plastic axial lead package provides high pulse current capability at low cost. Glass passivation insures reliable operation. Applications are: * * * * * High Pressure Sodium Vapor Lighting Strobes and Flashers Ignitors High Voltage Regulators Pulse Generators
MKP1V120 MKP1V130
SIDACs 0.9 AMPERES RMS 110 thru 280 VOLTS
MT1
MT2
CASE 59-04 (DO-41) Polarity denoted by cathode band
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Off-State Repetitive Voltage On-State Current RMS (TL = 80C, Lead Length = 3/8, conduction angle = 180, 60 Hz Sine Wave) On-State Surge Current (Non-repetitive) (60 Hz One Cycle Sine Wave, Peak Value) Operating Junction Temperature Range Storage Temperature Range Lead Solder Temperature (Lead Length 1/16 from Case, 10 s Max) Symbol VDRM IT(RMS) ITSM TJ Tstg TL MKP1V120 MKP1V130 90 0.9 4 -40 to +125 -40 to +150 230 Unit Volts Amp Amps C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Lead Lead Length = 3/8 Symbol RJL Max 40 Unit C/W
REV 1
Motorola Thyristor Device Data (c) Motorola, Inc. 1995
1
MKP1V120 MKP1V130
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted; both directions)
Characteristic Breakover Voltage MKP1V120 MKP1V130 Repetitive Peak Off-State Current (60 Hz Sine Wave, VD = Rated VDRM) Forward "On" Voltage (ITM = 1 A) Dynamic Holding Current Switching Resistance Breakover Current Maximum Rate-of-Change of On-State Current T L , MAXIMUM ALLOWABLE LEAD TEMPERATURE ( C) MKP1V120, 130, IDRM TJ = 125C VTM IH RS IBO di/dt Symbol VBO 110 120 -- -- -- -- 0.1 -- -- -- -- -- -- 1.3 -- -- -- 90 130 140 5 50 1.5 100 -- 200 -- A Volts mA k A A/s Min Typ Max Unit Volts
140 130 120 110 100 90 80 70 60 50 40 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IT(RMS) ON-STATE CURRENT (AMPS) 1.8 2.0 TJ = 125C Sine Wave Conduction Angle = 180
3 8 3 8
1.0 TL I T(RMS), ON-STATE CURRENT (AMPS) TJ = 125C Sine Wave Conduction Angle = 180 Assembled in PCB Lead Length = 3 8
0.8
0.6
0.4
0.2
0
20
40 60 80 100 120 TA, MAXIMUM AMBIENT TEMPERATURE (C)
140
Figure 1. Maximum Lead Temperature
I T, INSTANTANEOUS ON-STATE CURRENT (AMPS)
Figure 2. Maximum Ambient Temperature
PRMS , POWER DISSIPATION (WATTS)
10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0 1.0 2.0 3.0 4.0 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 5.0 TJ = 25C 125C
1.25 1.00 TJ = 25C Conduction Angle = 180C
0.75 0.50
0.25
0
0.2 0.4 0.6 0.8 IT(RMS), ON-STATE CURRENT (AMPS)
1.0
Figure 3. Typical On-State Voltage
Figure 4. Power Dissipation
2
Motorola Thyristor Device Data
MKP1V120 MKP1V130
THERMAL CHARACTERISTICS
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1
ZJL(t) = RJL * r(t) TJL = Ppk RJL[r(t)] tp where: TIME TJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t from this figure. For example, r(tp) = normalized value of transient resistance at time tp. The temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steadystate conditions are achieved. Using the measured value of T L, the junction temperature may be determined by:
TJ = TL + TJL
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
Figure 5. Thermal Response
TYPICAL CHARACTERISTICS
VBO, BREAKOVER VOLTAGE (NORMALIZED) 1.4 1.0 I H , HOLDING CURRENT (NORMALIZED) -40 -20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C) 120 140
1.2 1.0
0.9
0.8 0.6 0.4 -60
0.8 -60
-40
-20
0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (C)
120
140
Figure 6. Breakover Voltage
Figure 7. Holding Current
100 IPK , PEAK CURRENT (AMPS)
ITM IH
VTM
Slope = RS
IS IPK IDRM VS I(BO) V(BO)
10
VDRM 10% tw 1.0 0.1 1.0 tw, PULSE WIDTH (ms) 10 100 RS
+(
*VS ) ( IS *I(BO) )
V (BO)
Figure 8. Pulse Rating Curve
Figure 9. V-I Characteristics
Motorola Thyristor Device Data
3
MKP1V120 MKP1V130
PACKAGE DIMENSIONS
B
NOTES: 1. POLARITY DENOTED BY CATHODE BAND. 2. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION.
K
D
DIM A B D K
A
MILLIMETERS MIN MAX 5.97 6.60 2.79 3.05 0.76 0.86 27.94 ---
INCHES MIN MAX 0.235 0.260 0.110 0.120 0.030 0.034 1.100 ---
K
CASE 59-04 (DO-41) ISSUE M DATE 09/25/84
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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*MKP1V120/D*
Motorola Thyristor Device Data
MKP1V120/D

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